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| SavantIC Semiconductor www..com Product Specification Silicon PNP Power Transistors 2SB1101 DESCRIPTION *With TO-220 package *Complement to type 2SD1601 *DARLINGTON *High DC current gain APPLICATIONS *For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -4 -8 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www..com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collecto cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA ,IB=0 IE=-50mA ,IC=0 IC=-2A; IB=-4mA IC=-4A; IB=-40mA IC=-2A; IB=-4mA IC=-4A; IB=-40mA VCB=-60V; IE=0 VCE=-50V; RBE=B IC=-2A ; VCE=-3V ID=4A; 1000 MIN -60 -7 2SB1101 SYMBOL V(BR)CEO V(BR)EBO VCEsat -1 VCEsat -2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD TYP. MAX UNIT V V -1.5 -3.0 -2.0 -3.5 -100 -10 20000 3.0 V V V V A A V Switching times ton ts tf Turn-on time Storage time Fall time IC=-2A IB1=-IB2=-4mA 0.8 4.0 1.0 s s s 2 SavantIC Semiconductor www..com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1101 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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